? 2008 ixys corporation, all rights reserved ds99867a(04/08) v dss = 1000v i d25 = 44a r ds(on) 220 m t rr 300 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c44a i dm t c = 25 c, pulse width limited by t jm 110 a i ar t c = 25 c22a e as t c = 25 c2j dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 1250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting torque 30..120/6.7..27 n/lb. weight 10 g IXFB44N100P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 1000 v v gs(th) v ds = v gs , i d = 1ma 3.5 6.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 3 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25, note 1 220 m features z fast recovery diode z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z plus 264 tm package for clip or spring mounting z space savings z high power density g = gate d = drain s = source tab = drain plus264 tm (ixfb) (tab) g d s applications z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor controls z robotics and servo controls polar tm power mosfet hiperfet tm
ixys reserves the right to change limits, test conditions, and dimensions. IXFB44N100P symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 20 35 s c iss 19 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1060 pf c rss 41 pf r gi gate input resistance 1.70 t d(on) resistive switching times 60 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 68 ns t d(off) r g = 1 (external) 90 ns t f 56 ns q g(on) 305 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 104 nc q gd 126 nc r thjc 0.10 c /w r thcs 0.13 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 44 a i sm repetitive, pulse width limited by t jm 176 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 300 ns q rm 2.5 c i rm 17 a preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. i f = 22a, -di/dt = 100a/ s v r = 100v plus264 tm (ixfb) outline
? 2008 ixys corporation, all rights reserved IXFB44N100P fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 01234567891011 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 9v 7v 8v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 1012141618202224 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 4. r ds(on) normalized to i d = 22a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 44a i d = 22a fig. 5. r ds(on) normalized to i d = 22a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 102030405060708090 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXFB44N100P ixys ref: f_44n100p(97)4-01-08-d fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55.566.577.5 88.59 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v gs - volts v ds = 500v i d = 22a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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